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| Not for new design, this product will be obsoleted soon TSDF1205 / 1205R / 1205W / 1205RW Vishay Semiconductors 12 GHz Silicon NPN Planar RF Transistor 2 1 Features * * * * * Low power applications Very low noise figure e3 High transition frequency fT = 12 GHz Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 1 4 2 SOT143 SOT143R 4 2 3 1 SOT343 Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. 3 1 4 2 SOT343R Mechanical Data Typ:TSDF1205 Case: SOT143 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Typ: TSDF1205R Case: SOT143R Plastic case Weight: approx. 8.0 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 4 3 Electrostatic sensitive device. Observe precautions for handling. 13629 Typ: TDSF1205W Case: SOT343 Plastic case Weight: approx. 6.0 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Typ: TSDF1205RW Case: SOT343R Plastic case Weight: approx. 8.0 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Parts Table Part TSDF1205 TSDF1205R TSDF1205RW TSDF1205W Ordering Code TSDF1205-GS08 TSDF1205R-GS08 TSDF1205RW-GS08 TSDF1205W-GS08 F05 05F W0F WF0 Type Marking Remarks Tape and Reel Tape and Reel Tape and Reel Tape and Reel Document Number 85065 Rev. 1.7, 08-Sep-08 www.vishay.com 1 TSDF1205 / 1205R / 1205W / 1205RW Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Tamb 132 C Test condition Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 9 4 2 12 40 150 - 65 to + 150 Unit V V V mA mW C C Maximum Thermal Resistance Parameter Junction to ambient air 1) 1) Test condition Symbol RthJA Value 450 Unit K/W on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu Electrical DC Characteristics Tamb = 25 C, unless otherwise specified Parameter Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage Test condition VCE = 12 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 5 mA, IB = 0.5 mA Symbol ICES ICBO IEBO V(BR)CEO VCEsat hFE 50 4 0.1 120 0.5 250 Min Typ. Max 100 100 2 Unit A nA A V V DC forward current transfer ratio VCE = 2 V, IC = 2 mA www.vishay.com 2 Document Number 85065 Rev. 1.7, 08-Sep-08 TSDF1205 / 1205R / 1205W / 1205RW Vishay Semiconductors Electrical AC Characteristics Tamb = 25 C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Power gain Test condition VCE = 2 V, IC = 5 mA, f = 1 GHz VCB = 1 V, f = 1 MHz VCE = 1 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 2 V, IC = 2 mA, ZS = ZSopt, ZL = 50 , f = 2 GHz VCE = 2 V, IC = 2 mA, f = 2 GHz (at Fopt) VCE = 2 V, IC = 5 mA, ZS = ZSopt, ZL = 50 f = 2 GHz Transducer gain VCE = 2 V, IC = 5 mA, Z0 = 50 , f = 2 GHz Symbol fT Ccb Cce Ceb F Gpe Gpe |S21e|2 Min Typ. 12 0.2 0.35 0.15 1.3 13 11.5 12.5 Max Unit GHz pF pF pF dB dB dB dB Typical Characteristics Tamb = 25 C, unless otherwise specified Ccb - Collector Base Capacitance (pF) 100 Ptot - Total Power Dissipation (mW) 80 60 40 20 0 0 14284 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 V CB - Collector Base Voltage (V) 20 40 60 80 100 120 140 160 14286 Tamb - Ambient Temperature (C) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 3. Collector Base Capacitance vs. Collector Base Voltage 16 f T - Transition Frequency (GHz) 14 12 10 8 6 4 2 0 0 14285 3.0 f =1 GHz 2.5 V CE = 3 V F - Noise Figure (dB) V CE = 2 V f = 2 GHz ZS = 50 2.0 1.5 1.0 0.5 0.0 V CE = 2 V 2 4 6 8 10 12 14 14287 0 1 2 3 4 5 6 I C - Collector Current (mA) I C - Collector Current (mA) Figure 2. Transition Frequency vs. Collector Current Figure 4. Noise Figure vs. Collector Current Document Number 85065 Rev. 1.7, 08-Sep-08 www.vishay.com 3 TSDF1205 / 1205R / 1205W / 1205RW Vishay Semiconductors Package Dimensions in mm (Inches): SOT143 0.1 [0.004] max. 1.1 [0.043] 2.6 [0.102] 2.35 [0.093] 1.8 [0.071] 1.6 [0.063] 0.5 [0.020] 0.35 [0.014] 0.9 [0.035] 0.75 [0.030] foot print recommendation: 3 [0.118] 2.8 [0.110] 0.5 [0.020] 0.35 [0.014] 0.5 [0.020] 0.35 [0.014] 0.15 [0.006] 0.08 [0.003] 1.7 [0.067] 0.9 [0.035] 0.9 [0.035] 0.8 [0.031] 1.2 [0.047] 1.4 [0.055] 1.2 [0.047] 0.9 [0.035] 0.8 [0.031] 2 [0.079] 2 [0.079] 1.8 [0.071] 0.8 [0.031] 1.9 [0.075] 96 12240 Package Dimensions in mm (Inches): SOT143R 96 12239 www.vishay.com 4 Document Number 85065 Rev. 1.7, 08-Sep-08 TSDF1205 / 1205R / 1205W / 1205RW Vishay Semiconductors Package Dimensions in mm (Inches): SOT343 0.1 [0.004] max. 0.2 [0.008] 0.1 [0.004] 2.2 [0.087] 1.8 [0.071] 1 [0.039] 0.8 [0.031] 2 [0.079] 1.25 [0.049] 1.05 [0.041] 0.4 [0.016] 0.25 [0.010] 0.7 [0.028] 0.55 [0.022] foot print recommendation: 0.4 [0.016] 0.25 [0.010] 0.4 [0.016] 0.25 [0.010] 0.15 [0.006] min. 2.2 [0.087] 1.15 [0.045] 0.09 [0.035] 0.6 [0.024] 1.35 [0.053] 1.15 [0.045] 1.6 [0.063] 1.4 [0.055] 1.2 [0.047] 96 12237 1.3 [0.051] Package Dimensions in mm (Inches): SOT343R 96 12238 Document Number 85065 Rev. 1.7, 08-Sep-08 0.8 [0.031] www.vishay.com 5 TSDF1205 / 1205R / 1205W / 1205RW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 85065 Rev. 1.7, 08-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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